Trench capacitor memory cell and process for formation thereof

Details Trench capacitor memory cell and process for formation thereof Trench capacitor memory cell and process for formation thereof

1994-03-03

1995-10-24

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257305, 257397, 257508, H01L 2968

Patent

active

054612489

ABSTRACT:
A trench capacitor memory cell having a semiconductor substrate, an active region having a transistor on a portion of the semiconductor substrate, a field region formed by removing portion of the semiconductor substrate except for portions of the active region to a certain depth below the surface of the semiconductor substrate, a capacitor trench region formed in contact with a part of the active region and within the field region, and a polysilicon plug formed within the field region except for the trench region, and insulated by being surrounded by an insulating layer.

REFERENCES:
patent: 4577395 (1986-03-01), Shibata
patent: 4900693 (1990-02-01), Manning
patent: 5006910 (1991-04-01), Taguchi
patent: 5041887 (1991-08-01), Kumagai et al.
patent: 5329146 (1994-07-01), Soeda
patent: 5346845 (1994-09-01), Jun

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