Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-12-06
2005-12-06
Tran, Minh-Loan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S304000, C257S305000, C257S309000, C257S535000, C438S386000, C438S243000
Reexamination Certificate
active
06972451
ABSTRACT:
A capacitor formed in a substrate including a recess dug into a substrate; a first layer of a dielectric material covering the walls, the bottom and the edges of the recess; a second layer of a conductive material covering the first layer; a third layer of a conductive or insulating material filling the recess; trenches crossing the third layer; a fourth layer of a conductive material covering the walls, the bottoms as well as the intervals between these trenches and the edges thereof; a fifth layer of a dielectric material covering the fourth layer; and a sixth layer of a conductive material covering the fifth layer.
REFERENCES:
patent: 5275974 (1994-01-01), Ellul et al.
patent: 5976928 (1999-11-01), Kirlin et al.
patent: 6103586 (2000-08-01), Chetlur et al.
patent: 6153901 (2000-11-01), Higashi
patent: 6362012 (2002-03-01), Chi et al.
patent: 6437385 (2002-08-01), Bertin et al.
patent: 2002/0025609 (2002-02-01), Coursey
French Search Report from French Patent Application 02/05965, filed May 15, 2002.
Cremer Sébastien
Delpech Philippe
Marty Michel
Jorgenson Lisa K.
Morris James H.
STMicroelectronics S.A.
Tran Minh-Loan
Wolf Greenfield & Sacks P.C.
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