Trench capacitor field shield with sidewall contact

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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Details

257305, 257394, 257630, H01L 27108, H01L 2358

Patent

active

055127673

ABSTRACT:
Structures and methods are presented for forming a field shield for a trench capacitor for a memory cell with a contact through insulator along a sidewall of the trench to a desired region of the semiconducting substrate. The desired region is typically held at a substantially fixed potential; in any case it does not include a node diffusion.

REFERENCES:
patent: 4751558 (1988-06-01), Kenney
patent: 4918502 (1990-04-01), Kaga et al.
patent: 4987470 (1991-01-01), Suzuki et al.
patent: 5111259 (1992-05-01), Teng et al.

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