Trench-capacitor DRAM cell having a folded gate conductor

Details Trench-capacitor DRAM cell having a folded gate conductor Trench-capacitor DRAM cell having a folded gate conductor

2005-06-21

2005-06-21

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S302000, C257S304000, C257S305000, C438S242000, C438S243000

Reexamination Certificate

active

06909136

ABSTRACT:
A novel trench-capacitor DRAM cell structure is disclosed. The trench-capacitor DRAM cell of this invention includes an active area island having a horizontal semiconductor surface and a vertical sidewall contiguous with the horizontal semiconductor surface. A pass transistor is disposed at the corner of the active area island. The pass transistor includes a folded gate conductor strip extending from the horizontal semiconductor surface to the vertical sidewall of the active area island, a source formed in the horizontal semiconductor surface, a drain formed in the vertical sidewall, and a gate oxide layer underneath the folded gate conductor strip. The source and drain define a folded channel. The trench-capacitor DRAM cell further includes a trench capacitor that is insulated from the folded gate conductor strip by a trench top oxide (TTO) layer and is coupled to the pass transistor via the drain.

REFERENCES:
patent: 6355954 (2002-03-01), Gall et al.
patent: 6399977 (2002-06-01), Alsmeier

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