Trench capacitor cells for a dram having single monocrystalline

Details Trench capacitor cells for a dram having single monocrystalline Trench capacitor cells for a dram having single monocrystalline

1994-12-02

1996-09-10

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Capacitors

257301, 257304, 257305, H01L 2968

Patent

active

055555209

ABSTRACT:
The present structure is characterized by the electrode of a trench capacitor of a DRAM and a periphery thereof. A trench is formed adjacent to an N type region in a substrate. An insulating film is formed on the side wall of this trench and only a part of the insulating film around the upper portion of the trench is removed, forming a window. An N type polycrystalline silicon film of a lower capacitor electrode is formed over a region from the bottom of the trench to below the window, and a capacitor insulating film is formed on this polycrystalline silicon film. A polycrystalline silicon film which becomes a first upper capacitor electrode is formed on the capacitor insulating film, filling the trench up to the lower edge of the window. A monocrystalline silicon film which becomes a second upper capacitor electrode is formed on the latter polycrystalline silicon film in such a way as to contact an N type region, filling the upper portion of the trench. An insulating film similar to a gate insulating film on the substrate is formed on the monocrystalline silicon film.

REFERENCES:
patent: 4803535 (1989-02-01), Taguchi
patent: 5023683 (1991-06-01), Yamada

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