Trench capacitor and corresponding method of production

Details Trench capacitor and corresponding method of production Trench capacitor and corresponding method of production

2008-03-04

2008-03-04

Purvis, Sue A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S304000, C257S305000, C257S309000, C257SE21651, C257SE21396, C257SE27092

Reexamination Certificate

active

07339224

ABSTRACT:
The invention relates to a trench capacitor, in particular for use in a semiconductor memory cell, comprising a trench (2), embodied in a substrate (1), a first region (1a), provided in the substrate (1), as first capacitor electrode, a dielectric layer (10) on the trench wall as capacitor dielectric and a metallic filler material (30″) provided in the trench (2) as second electrode. Above the conducting metallic filling material (30″) a dielectric filling material (35) is provided in the trench (2) with a cavity (40) provided for mechanical tensions. The invention further relates to a corresponding method of production.

REFERENCES:
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S. Nakamura et al., “Aluminum Word Line and Bit Line Fabrication Technology for COB DRAM Using a Polysilicon-Aluminum Substitute,” Symposium on VLSI Technology Digest of Technical Papers, Jun. 14, 1999.

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