Trench capacitor and a method for manufacturing the same

Details Trench capacitor and a method for manufacturing the same Trench capacitor and a method for manufacturing the same

2005-07-12

2005-07-12

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S303000, C257S304000, C257S306000, C257S311000, C257S532000, C438S243000, C438S386000

Reexamination Certificate

active

06917064

ABSTRACT:
A trench capacitor comprises a semiconductor substrate, a trench, formed in the semiconductor substrate, having upper and lower portions, a first doped polysilicon layer filled in the lower portion through a first dielectric film and doped with a first impurity having a first conductivity type, at least a second doped polysilicon layer filled in the upper portion through a second dielectric film and doped with a second impurity different from the first impurity, the second impurity having the first conductivity type, and a buried strap layer provided on the second doped polysilicon layer and composed of the first doped polysilicon layer.

REFERENCES:
patent: 5905279 (1999-05-01), Nitayama et al.
patent: 6117726 (2000-09-01), Tsai et al.
patent: 6200873 (2001-03-01), Schrems et al.
patent: 6236079 (2001-05-01), Nitayama et al.
patent: 6238967 (2001-05-01), Shiho et al.
patent: 2000-200887 (2000-07-01), None

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