Trench capacitor

Details Trench capacitor Trench capacitor

2007-01-31

2009-06-02

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S301000, C257SE27092

Reexamination Certificate

active

07541634

ABSTRACT:
A trench capacitor including a substrate, at least a group of capacitor units, an isolation structure and a conductive layer is described. The substrate includes a first trench and a second trench. The group of capacitor units is disposed in the substrate. The group of capacitor units includes a first capacitor disposed in the first trench and a second capacitor disposed in the second trench. The isolation structure is disposed in the substrate between the first capacitor and the second capacitor. The conductive layer is disposed in the substrate above the isolation structure and electrically connected to the first upper electrode and the second upper electrode.

REFERENCES:
patent: 7163858 (2007-01-01), Chung
patent: 7271056 (2007-09-01), Su

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