Trench buried bit line memory devices and methods thereof

Details Trench buried bit line memory devices and methods thereof Trench buried bit line memory devices and methods thereof

2007-01-30

2007-01-30

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S300000, C257SE27084

Reexamination Certificate

active

10968429

ABSTRACT:
A memory device includes isolation trenches that are formed generally parallel to and along associated strips of active area. A conductive bit line is recessed within each isolation trench such that the uppermost surface of the bit line is recessed below the uppermost surface of the base substrate. A bit line contact strap electrically couples the bit line to the active area both along a vertical dimension of the bit line strap and along a horizontal dimension across the uppermost surface of the base substrate.

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