Treatment of planarizing layer in multilayer electron beam resis

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making

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430296, 430271, 430942, 4284735, 428446, 428451, G03C 176

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048106178

ABSTRACT:
An improved electron beam resist structure comprises an organic planarizing layer which has been treated with an ion beam for a time sufficient to render it conductive and an electron beam resist layer thereover. The electron beam resist layer is preferably oxygen plasma resistant. When the resist layer is not resistant to oxygen plasma and it is desired to develop the planarizing layer by oxygen plasma, the structure additionally includes a thin hard mask layer, suitably of silicon dioxide, interposed between the conductive planarizing layer and the resist layer.

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E. C. Fredericks, "Adhesion and Release Layer for Resist Structures", IBM Technical Disclosure Bulletin, vol. 20, No. 3, Aug. 1977, p. 992.
E. Ong and E. L. Hu, "Multilayer Resists for Fine Line Optical Lithography", Solid State Technology, Jun. 1984, pp. 155-160.
J. B. Kruger, P. Rissman and M. S. Chang, Journal of Vacuum Science Technology, vol. 19, No. 4, Nov., Dec., 1981, pp. 1320-1324.

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