Treatment method for surface of photoresist layer and method...

Details Treatment method for surface of photoresist layer and method... Treatment method for surface of photoresist layer and method...

2005-01-06

2008-10-14

Vinh, Lan (Department: 1792)

Etching a substrate: processes

Gas phase etching of substrate

C216S067000, C216S079000, C438S636000, C438S637000, C438S714000, C438S717000, C438S719000, C438S723000, C438S724000, C438S725000, C438S736000

Reexamination Certificate

active

07435354

ABSTRACT:
A treatment method for a surface of a photoresist layer is provided. After forming a patterned photoresist layer over a wafer, a surface treatment step is performed to the photoresist layer by using at least one reaction gas comprising hydrogen bromide or hydrogen iodide to form a hardened layer over the surface of the photoresist layer. Wherein, the surface treatment step and the etching step are in-situ performed.

REFERENCES:
patent: 6541164 (2003-04-01), Kumar et al.
patent: 6716571 (2004-04-01), Gabriel et al.
patent: 7157377 (2007-01-01), Garza et al.
patent: 2002/0094693 (2002-07-01), Yang et al.
patent: 2004/0157430 (2004-08-01), Mandal

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