Etching a substrate: processes – Gas phase etching of substrate – With measuring – testing – or inspecting
Reexamination Certificate
2006-01-19
2010-11-30
Tran, Binh X (Department: 1713)
Etching a substrate: processes
Gas phase etching of substrate
With measuring, testing, or inspecting
C216S084000, C700S266000
Reexamination Certificate
active
07842189
ABSTRACT:
A processing apparatus includes counters each used to measure the length of RF discharge time over which power is applied to a consumable component in correspondence to a specific type of processing executed in a processing chamber, a storage to store wear coefficient information indicating wear coefficients each corresponding to one of the plurality of types of processing, and a control unit that obtains information indicating RF discharge time lengths measured by the counters in correspondence to the individual types of processing, obtains the wear coefficients corresponding to the individual types of processing indicated in the wear coefficient information stored in the storage, calculates a wear index value for the consumable component based upon the RF discharge time lengths and the wear coefficients corresponding to the individual types of processing, and executes consumable component management processing based upon the calculated wear index value.
REFERENCES:
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patent: 11 057386 (1999-03-01), None
patent: 11 121194 (1999-04-01), None
patent: 03 003437 (2003-01-01), None
patent: 2003 031456 (2003-01-01), None
Lin Patti
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Tokyo Electron Limited
Tran Binh X
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