Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-08-16
2005-08-16
Potter, Roy (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S622000
Reexamination Certificate
active
06930033
ABSTRACT:
The present invention discloses a method including providing a substrate; forming a dielectric material over the substrate; forming an opening in the dielectric material; treating a surface of the dielectric material; forming a conductor in the opening; and planarizing the conductor.The present invention further discloses a structure including a substrate; a dielectric material located over the substrate, the dielectric material having a low dielectric constant; an opening located in the dielectric material; a treated layer located over a sidewall of the opening; and a conductor located in the opening and over the treated layer.
REFERENCES:
patent: 6417098 (2002-07-01), Wong et al.
patent: 6603204 (2003-08-01), Gates et al.
Ingerly Douglas B.
Schroeder Brett R.
Chen George
Intel Corporation
Potter Roy
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