Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1992-07-28
1993-11-09
Chaudhuri, Olik
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156603, 15662072, 148DIG165, 437 17, C30B 104
Patent
active
052599175
ABSTRACT:
A method for producing a semiconductor crystal which is highly transparent in the 1-3 .mu. spectral range is described which comprises the steps of exposing the crystal to high energy ionizing gamma radiation to produce within the crystal energetic photo electrons which produces defect donors to cancel acceptors existing in the as-grown crystal.
REFERENCES:
patent: 3872492 (1975-03-01), Robbins
patent: 3933990 (1976-01-01), Gentile et al.
patent: 4107564 (1978-08-01), Klimin et al.
patent: 4309225 (1982-01-01), Fan et al.
patent: 4469551 (1984-09-01), Loude
patent: 4637864 (1987-01-01), Covino et al.
Chaudhuri Olik
Garrett Felisa
Kundert Thomas L.
Scearce Bobby D.
The United States of America as represented by the Secretary of
LandOfFree
Transparent semiconductor crystals does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Transparent semiconductor crystals, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transparent semiconductor crystals will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1140024