Transparent semiconductor crystals

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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Details

156603, 15662072, 148DIG165, 437 17, C30B 104

Patent

active

052599175

ABSTRACT:
A method for producing a semiconductor crystal which is highly transparent in the 1-3 .mu. spectral range is described which comprises the steps of exposing the crystal to high energy ionizing gamma radiation to produce within the crystal energetic photo electrons which produces defect donors to cancel acceptors existing in the as-grown crystal.

REFERENCES:
patent: 3872492 (1975-03-01), Robbins
patent: 3933990 (1976-01-01), Gentile et al.
patent: 4107564 (1978-08-01), Klimin et al.
patent: 4309225 (1982-01-01), Fan et al.
patent: 4469551 (1984-09-01), Loude
patent: 4637864 (1987-01-01), Covino et al.

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