Transparent oxide semiconductor thin film transistor

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S608000, C257SE33064, C257SE31126

Reexamination Certificate

active

07470607

ABSTRACT:
This invention relates to novel, transparent oxide semiconductor thin film transistors (TFT's) and a process for making them.

REFERENCES:
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patent: 6580473 (2003-06-01), Kim
patent: 2002/0037249 (2002-03-01), Konakahara et al.
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Yutaka Ohya et al., Thin Film Transistor of ZnO Fabricated by Chemical Solution Deposition, Jpn. J. Appl. Phys., vol. 40:297-298, 2001.
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PCT International Search Report Dated Aug. 11, 2004, International Appln. No. PCT/US03/32439, International Publn. Date Oct. 10, 2003.

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