Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-11-20
2007-11-20
Quach, T. N. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S292000, C257S510000, C257SE27133
Reexamination Certificate
active
10923693
ABSTRACT:
An isolation region formed in a substrate and lined with a transparent metal layer. The isolation region provides isolation between adjacent active areas of an integrated circuit structure, for example the inventive region may provide isolation between pixels of a pixel array. Utilizing a transparent material maintains high quantum efficiency of the pixels as photons are not blocked from penetrating into the substrate. In one exemplary embodiment, a shallow trench isolation region is formed in a substrate, lined with an oxide or other dielectric, and an indium-tin-oxide shielding layer is formed over the oxide. The lined trench may then be filled with either the transparent metal material or a transparent insulating material.
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patent: 6611037 (2003-08-01), Rhodes
patent: 6888214 (2005-05-01), Mouli et al.
patent: 2002/0089004 (2002-07-01), Rhodes
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D.L. Losee et al., “All-ITO gate, two phase CCD image sensor technology,” Proc. of IEDM, p. 397 (2003).
Dickstein & Shapiro LLP
Micro)n Technology, Inc.
Quach T. N.
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