Transparent electrode made from indium-zinc-oxide and...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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C257S453000, C257S516000, C216S006000, C216S096000

Reexamination Certificate

active

10642174

ABSTRACT:
A pixel electrode employs a transparent electrode made from indium-zinc-oxide (IZO) that is capable of preventing damage and bending thereof. In a liquid crystal display device containing pixel electrodes, the transparent electrode is made from indium-zinc-oxide (IZO) having an amorphous structure so that it can be etched within a short period of time with a low concentration of etchant. Accordingly, it is possible to prevent damage and bending of the transparent electrode upon the patterning thereof.

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patent: 11264995 (1999-09-01), None

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