Transparent conductive layer forming method, transparent...

Details Transparent conductive layer forming method, transparent... Transparent conductive layer forming method, transparent...

2006-09-29

2008-10-28

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S057000, C438S087000, C438S096000

Reexamination Certificate

active

07442627

ABSTRACT:
A transparent conductive layer forming method is disclosed which comprises the steps of introducing a reactive gas to a discharge space, exciting the reactive gas in a plasma state by discharge at atmospheric pressure or at approximately atmospheric pressure, and exposing a substrate to the reactive gas in a plasma state to form a transparent conductive layer on the substrate, wherein the reactive gas comprises a reducing gas.

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