Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2005-08-16
2005-08-16
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C438S485000, C438S486000
Reexamination Certificate
active
06930025
ABSTRACT:
In a process for forming on a substrate a transparent conductive film having crystallizability, the process comprises a first step of forming a film at a first film formation rate and a second step of forming a film at a second film formation rate, and the relationship between film formation rates in the respective steps satisfies:in-line-formulae description="In-line Formulae" end="lead"?2≦(second film formation rate)/(first film formation rate)≦100;in-line-formulae description="In-line Formulae" end="tail"?which provides a process for producing a transparent conductive film by a deposition process advantageous for cost reduction, which can form in a short time a transparent conductive film having an uneven surface profile with a high light-confining effect, and can bring about an improvement in photovoltaic performance and enjoy a high mass productivity when applied to the formation of multi-layer structure of photovoltaic devices.
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Echizen Hiroshi
Kiso Shigeo
Nakayama Akiya
Okada Naoto
Takai Yasuyoshi
Coleman W. David
Fitzpatrick, Cella, Harper and Scinto
Nguyen Khiem D.
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