Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1993-06-24
1995-10-17
Thibodeau, Paul J.
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
1062862, 1062868, 2041921, C23C 1400, C23C 1432, C09D 100
Patent
active
054587530
ABSTRACT:
A transparent conductive film comprising zinc oxide as the main component, which contains gallium in an amount of from 0.5 to 12 atomic % based on the total amount of gallium and zinc, and which has a diffraction peak of the (002) face in its X-ray diffraction pattern, wherein the half value width of the diffraction peak of the (002) face is at most 0.6 degree.
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Group III Impurity Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering, Tadatsugu Minami, et al, Jpn. J. Appl. Phys., vol. 24 (1985), No. 10, pp. L781-L784.
Journal of Applied Physics, vol. 55, No. 4, Feb. 15, 1984, pp. 1029-1034, Nanto, et al., "Electrical And Optical Properties Of Zinc Oxide Thin Films Prepared By RF Magnetron Sputtering For Transparent Electrode Applications".
Adachi Kunihiko
Mitsui Akira
Sato Kazuo
Asahi Glass Company Ltd.
Sand Stephen
Thibodeau Paul J.
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