Transparent article having protective silicon nitride film

Details Transparent article having protective silicon nitride film Transparent article having protective silicon nitride film

2006-09-05

2006-09-05

Ahmadi, Mohsen (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

C427S164000, C427S178000, C427S204000, C427S219000, C428S336000, C428S216000, C428S469000, C428S472000, C359S359000, C359S580000

Reexamination Certificate

active

07101810

ABSTRACT:
Transparent articles comprising transparent, nonmetallic substrate and a transparent film stack is sputter deposited on the substrate. The film stack is characterized by including at least one infrared reflective metal film, a dielectric film over the metal film, and a protective silicon nitride film of 10 Å to 150 Å in thickness over the said dielectric film. The dielectric film desirably has substantially the same index of refraction as does silicon nitride and is contiguous with the silicon nitride film.

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