Transparent amorphous carbon structure in semiconductor devices

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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C430S022000, C430S311000

Reexamination Certificate

active

07132201

ABSTRACT:
A transparent amorphous carbon layer is formed. The transparent amorphous carbon layer has a low absorption coefficient such that the amorphous carbon is transparent in visible light. The transparent amorphous carbon layer may be used in semiconductor devices for different purposes. The transparent amorphous carbon layer may be included in a final structure in semiconductor devices. The transparent amorphous carbon layer may also be used as a mask in an etching process during fabrication of semiconductor devices.

REFERENCES:
patent: H566 (1989-01-01), Nyaiesh et al.
patent: 4849642 (1989-07-01), Katsumi
patent: 4971853 (1990-11-01), Chaiken et al.
patent: 4975144 (1990-12-01), Yamazaki et al.
patent: 5096791 (1992-03-01), Yahalom
patent: 5198263 (1993-03-01), Stafford et al.
patent: 5324365 (1994-06-01), Niwa
patent: 5346729 (1994-09-01), Pitts et al.
patent: 5358880 (1994-10-01), Lebby et al.
patent: 5369040 (1994-11-01), Halvis et al.
patent: 5420043 (1995-05-01), Kaisha
patent: 5431800 (1995-07-01), Kirchhoff
patent: 5437961 (1995-08-01), Yano et al.
patent: 5470661 (1995-11-01), Bailey et al.
patent: 5496752 (1996-03-01), Nasu et al.
patent: 5514885 (1996-05-01), Myrick
patent: 5578501 (1996-11-01), Niwa
patent: 5589307 (1996-12-01), Tacheuchi
patent: 5629532 (1997-05-01), Myrick
patent: 5669644 (1997-09-01), Kaihotsu et al.
patent: 5723029 (1998-03-01), Shimoyama
patent: 5733713 (1998-03-01), Yano et al.
patent: 5750316 (1998-05-01), Kawamura et al.
patent: 5800878 (1998-09-01), Yao
patent: 5830332 (1998-11-01), Babich et al.
patent: 5998100 (1999-12-01), Azuma
patent: 6035803 (2000-03-01), Robles et al.
patent: 6107734 (2000-08-01), Taneka et al.
patent: 6128868 (2000-10-01), Ohtsuka et al.
patent: 6136160 (2000-10-01), Hrkut et al.
patent: 6140570 (2000-10-01), Kariya
patent: 6140652 (2000-10-01), Shlepr et al.
patent: 6211065 (2001-04-01), Xi et al.
patent: 6221535 (2001-04-01), Cox et al.
patent: 6291334 (2001-09-01), Somekh
patent: 6300631 (2001-10-01), Shofner
patent: 6313896 (2001-11-01), Samant et al.
patent: 6316329 (2001-11-01), Hirota et al.
patent: 6323119 (2001-11-01), Xi et al.
patent: 6331380 (2001-12-01), Ye et al.
patent: 6346184 (2002-02-01), Sano et al.
patent: 6350997 (2002-02-01), Saeki
patent: 6394109 (2002-05-01), Somekh
patent: 6420095 (2002-07-01), Kawamura et al.
patent: 6423384 (2002-07-01), Khazeni et al.
patent: 6427703 (2002-08-01), Somekh
patent: 6444899 (2002-09-01), Kubota et al.
patent: 6447891 (2002-09-01), Veerasamy et al.
patent: 6461950 (2002-10-01), Yin et al.
patent: 6483127 (2002-11-01), Saeki
patent: 6508911 (2003-01-01), Han et al.
patent: 6541397 (2003-04-01), Bencher
patent: 6551941 (2003-04-01), Yang et al.
patent: 6566757 (2003-05-01), Banerjee
patent: 6573030 (2003-06-01), Fairbairn et al.
patent: 6583481 (2003-06-01), Itoh
patent: 6613603 (2003-09-01), Sano
patent: 6621535 (2003-09-01), Fukada
patent: 6624064 (2003-09-01), Sahin et al.
patent: 6627532 (2003-09-01), Gaillard
patent: 6649469 (2003-11-01), Wilson
patent: 6653735 (2003-11-01), Yang et al.
patent: 6668752 (2003-12-01), Yao
patent: 6780753 (2004-08-01), Latchford et al.
patent: 6784119 (2004-08-01), Gaillard et al.
patent: 6795636 (2004-09-01), Cronk et al.
patent: 6803313 (2004-10-01), Gao et al.
patent: 6821571 (2004-11-01), Huang
patent: 6825114 (2004-11-01), Fisher et al.
patent: 6841341 (2005-01-01), Fairbairn et al.
patent: 6852647 (2005-02-01), Bencher
patent: 6864556 (2005-03-01), You et al.
patent: 6875664 (2005-04-01), Huang et al.
patent: 6875687 (2005-04-01), Weidman
patent: 6884733 (2005-04-01), Dakshina-Murthy et al.
patent: 2001/0006837 (2001-07-01), Kwon et al.
patent: 2001/0011730 (2001-08-01), Saeki
patent: 2001/0017153 (2001-08-01), Kubota et al.
patent: 2002/0001778 (2002-01-01), Latchford et al.
patent: 2002/0003239 (2002-01-01), Ramdani et al.
patent: 2002/0086547 (2002-07-01), Mui et al.
patent: 2002/0100696 (2002-08-01), Sano et al.
patent: 2003/0198814 (2003-10-01), Khieu et al.
patent: 2003/0207207 (2003-11-01), Li
patent: 2004/0092098 (2004-05-01), Sudijono et al.
patent: 2005/0056835 (2005-03-01), Yin et al.
patent: 2005/0056940 (2005-03-01), Sandhu et al.
patent: 2006/0001175 (2006-01-01), Sandhu
patent: 2006/0003237 (2006-01-01), Yin et al.
patent: 0531232 (1993-03-01), None
patent: 1154468 (2001-11-01), None
patent: 58-204534 (1983-11-01), None
patent: WO-03038875 (2003-05-01), None
patent: WO-2004/012246 (2004-02-01), None
patent: WO-2005/034216 (2005-04-01), None
patent: WO-2005/034229 (2005-04-01), None
“International Search Report, for Application No. PCT/US2004/029172, date mailed Dec. 21, 2004”, 15 pages.
Liu, W. , et al., “Generating Sub-30nm Poly-Silicon Gates Using PECVD Amorphous Carbon as Hardmask and Anti-Reflective Coating”,Proceedings of the SPIE, 5040, Optical Microlithography XVI, Yen, A, (ed.),(Feb. 25, 2003),841-848.
Shieh, J. -., et al., “Characteristics of Fluorinated Amorphous Carbon Films and Implementation of 0.15 micron Cu/a-C:F Damascene Interconnection”,Journal of Vacuum Science and Technology, 19, (May 2001),780-787.
Pelton, Matthew , et al., “The optical absorption edge of diamond-like carbon: A quantum well model”,Journal of Applied Physics, 83(2), (Jan. 15, 1998),1029-35.
Chen, Z. Y., et al., “Optical Constants of Tetrahedral Amorphous Carbon Films in the Infrared Region and at a Wavelength of 633 nm”,Journal of Applied Physics, vol. 87 (9), American Institute of Physics,(May 1, 2000),4268.
He, X., et al., “Characterization and Optical Properties of Diamondlike Carbon Prepared by Electron Cyclotron Resonance Plasma”, Journal of Materials Research, vol. 14 (3),(Mar. 1999),1055.
Lide, D. R., et al., “Physical Constants of Organic Compounds”,CRC Handbook of Chemistry and Physics, Internet Version 2005, http://www.hbcpnetbase.com, (2005),12-157.
Zhou, X. T., et al., “Deposition and Properties of a-C:H films on Polymethyl Methacrylate by electron Cyclotron Resonance Microwave Plasma Chemical Vapor Deposion Method”,Surface and Coatings Technology, 123, www.elsevier.nl/locate.surfcoat,(2000),273-277.

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