Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-11-09
2010-10-19
Toledo, Fernando L (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S040000, C257S072000, C257S088000, C257S679000, C257SE51003, C257SE27084, C257SE21294, C257SE33053, C365S174000, C365S187000, C349S151000, C349S153000, C438S149000, C438S153000, C438S155000, C438S210000, C438S238000, C438S623000
Reexamination Certificate
active
07816721
ABSTRACT:
The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.
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Abe Hiroko
Nemoto Yukie
Nomura Ryoji
Yamazaki Shunpei
Yukawa Mikio
Dulka John P
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Toledo Fernando L
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