Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2011-07-05
2011-07-05
Elms, Richard (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S148000, C365S171000, C977S935000
Reexamination Certificate
active
07974119
ABSTRACT:
A transmission gate-based spin-transfer torque memory unit is described. The memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a source line. A NMOS transistor is in parallel electrical connection with a PMOS transistor and they are electrically connected with the source line and the magnetic tunnel junction data cell. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a polarized write current through the magnetic tunnel junction data cell. The PMOS transistor and the NMOS transistor are separately addressable so that a first write current in a first direction flows through the PMOS transistor and a second write current in a second direction flows through the NMOS transistor.
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A
Chen Yiran
Li Hai
Li Yang
Liu Hongyue
Lu Yong
Byrne Harry W
Campbell Nelson Whipps LLC
Elms Richard
Seagate Technology LLC
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