Translinear static memory cell with bipolar and MOS devices

Details Translinear static memory cell with bipolar and MOS devices Translinear static memory cell with bipolar and MOS devices

1986-04-17

1989-04-11

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Semiconductive

365154, 357 43, G11C 1134, G11C 1100, H01L 2702

Patent

active

048212350

ABSTRACT:
A translinear static memory cell employs both bipolar and metal-oxide-semiconductor technologies. Bipolar transistors are employed as switching devices, whereas MOS transistors provide power supply and coupling functions. Among other advantages, the bipolar transistors provide large changes in output current for small changes in input voltage, thereby enabling high level read signals to be obtained. The MOS load and coupling transistors facilitate bidirectional current flow into and out of the cell, thereby enabling write operations to be achieved during relatively short periods of time.

REFERENCES:
patent: 3986173 (1976-10-01), Baitinger et al.
patent: 4276616 (1981-06-01), Hennig
patent: 4541006 (1985-09-01), Ariizumi et al.
patent: 4543595 (1985-09-01), Vora
patent: 4653025 (1987-03-01), Minato et al.
patent: 4667311 (1987-05-01), Ul Haq et al.

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