Electronic digital logic circuitry – Function of and – or – nand – nor – or not – Bipolar transistor
Reexamination Certificate
1999-08-24
2001-02-20
Tokar, Michael (Department: 2819)
Electronic digital logic circuitry
Function of and, or, nand, nor, or not
Bipolar transistor
C326S089000, C326S075000
Reexamination Certificate
active
06191619
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates generally to semiconductor signal translators.
2. Description of the Related Art
A variety of semiconductor families are available for forming modern electronic circuits. Each have advantages and disadvantages and typically require different operating signals. For example, bipolar circuits that are arranged in emitter-coupled structures (termed ECL when used for emitter-coupled logic applications) are fast and generate currents that can drive capacitive loads. This same current generation, however, causes them to consume significant power. In contrast, metal-oxide semiconductor (CMOS) circuits use significantly less power and, although they are generally slower than equivalent bipolar circuits, their low power dissipation makes them particularly suited for realizing densely-packed logic circuits.
When used with a rail-to-rail supply voltage of five volts, for example, guaranteed high and low CMOS logic levels are typically narrow windows (e.g., one-half volt) that adjoin each supply rail. In contrast, the differential pairs of emitter-coupled bipolar structures operate with a much lower swing (e.g., ~200 millivolts) between logic levels. In order to realize the advantages of combined bipolar and CMOS circuits, signal translators are therefore required that can convert relatively-low bipolar signal swings to the nearly rail-to-rail signal swings of CMOS circuits.
Various integrated-circuit fabrication technologies have been developed for these semiconductor families. Although many of these processes are exclusively restricted to bipolar fabrication or to CMOS fabrication, BiCMOS technologies also exist that can place both structures on a single integrated-circuit chip. Regardless of the fabrication technology, combined bipolar and CMOS circuits are typically coupled to the same supply rails which adds a further complication to signal transition between them. Nonetheless, various signal translators have been developed for these families (e.g., see U.S. Pat. Nos. 4,794,317; 4,806,799; 4,968,905; 5,075,580; and 5,459,412).
FIG. 1
illustrates an exemplary signal translator
20
that is restricted to bipolar structures so that it is especially suited for realization with bipolar integrated-circuit fabrication technologies. The signal translator
20
has been incorporated in various products (e.g., AD9042 analog-to-digital converters) of Analog Devices, Inc, the assignee of the present invention.
The translator
20
combines complementary first and second differential pairs
22
, active loads in the form of current mirrors
24
and
25
and an output stage
26
that has complementary transistors
28
and
29
. In response to typical bipolar signal levels at an input port
32
, the complementary differential pairs
22
steers currents I
1
to and away from transistors
34
and
35
of the current mirrors. In response to these steered currents, the transistors
28
and
29
communicate output signals via their coupled collectors at a single-ended output port
36
.
Because the complementary transistors
28
and
29
are arranged in common-emitter configurations, their coupled collectors can deliver signals that are very near the +V and −V supply rails
38
and
39
. In addition, transistors
28
and
29
can generate the currents necessary to drive capacitive loads such as those formed by CMOS circuits and their associated parasitic integrated-circuit capacitances. When driving capacitive loads, an initially high current from transistor
28
, for example, will exponentially fall to a small sustaining trickle current as the voltage at the output port
36
approaches the supply rail
38
.
The signal at the output port
36
is thus suitable for driving CMOS circuits. Without additional circuitry, however, transistors
28
,
29
,
34
and
35
will saturate which degrades the speed of the signal translator
20
. Accordingly, voltage clamps
42
and
43
are connected to the collectors of transistors
34
and
35
. Resistors
44
and
45
respectively couple transistors
48
and
49
of the complementary differential pairs
22
to current-mirror transistors
34
and
35
and diodes
50
and
51
respectively couple the same differential pairs transistors to the output port
36
. Finally, current sources
52
and
53
generate currents I
2
and are connected between emitters and bases of respective output transistors
28
and
29
.
In operation of the translator
20
, it is intended that each of the transistors
34
and
35
is on when its associated output transistor is off. The clamps
42
and
43
can be realized in various ways to limit the voltage between the collectors of transistors
34
and
35
and their respective supply rails to a value (e.g., ~300 millivolts) that is sufficient to prevent their saturation while insuring that their associated output transistors
28
and
29
are off.
When a current I
1
is steered through transistor
48
, it initially flows through resistor
44
and turns on output transistor
28
. In response, the single-ended signal at the output port
36
rises to a potential at which it turns on diode
50
. Ignoring the small base current of output transistor
28
and the small trickle current flowing to the output port
36
and given that I
1
>I
2
, it is apparent that the circuit stabilizes with current I
2
flowing through resistor
44
and a current I
1
−I
2
flowing from output transistor
28
to differential-pair transistor
48
through diode
50
.
Because the voltage drop V
d
across diode
50
substantially matches the base-emitter drop V
be
of the output transistor
28
, the collector potential of transistor
28
is limited below the supply rail
38
by the product of the current I
2
and the resistance of resistor
44
. For a given value of the current I
2
, an appropriate resistance of the resistor
44
can thus be chosen to limit the voltage between the output port
36
and the supply rail
38
to a value (e.g., ~300 millivolts) that is sufficient to prevent saturation of the output transistor
28
. The operation described above is repeated in complementary fashion for output transistor
29
when the input signal at the input port
32
causes current to be steered through transistor
49
.
It has been observed however, that the speed of the translator
20
is degraded because when each output transistor turns on, it must initially absorb the I
1
current of the other in addition to supplying current for driving a capacitive load. When output transistor
28
turns off, for example, stored charges in its base initially continue to support a current of substantially I
1
. As output transistor
29
turns on, it must absorb this current and therefore the current available to drive a capacitive load is initially reduced by I
1
and the time to bring the signal at the output port
36
to a CMOS level is accordingly increased.
SUMMARY OF THE INVENTION
The present invention is directed to high-speed signal translators that convert a differential input signal to a single-ended output signal. This goal is realized with first and second current mirrors, first and second complimentary differential pairs of transistors, a complimentary transistor output stage and first and second current-diverting transistors.
The complimentary output stage initially generates the single-ended output signal in response to currents received from the complimentary differential pairs. When the output signal has been established, the current-diverting transistors respond by carrying portions of the currents supplied by the complimentary differential pairs. The current-diverting transistors drive the current mirrors so that they divert other portions of these currents away from the complimentary output stage.
Stored charges in the output stage are accordingly reduced and its response time enhanced. Translator speed is further enhanced with elements associated with the current-diverting transistors that prevent saturation in the current mirrors and the complimentary output stage.
I
Elliott Michael R.
Moreland Carl W.
Analog Devices Inc.
Koppel & Jacobs
Le Don Phu
Tokar Michael
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