Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-06-26
2007-06-26
Nguyen, Thanh (Department: 2813)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S786000, C438S769000, C438S240000, C257SE21280, C257SE21278
Reexamination Certificate
active
11096515
ABSTRACT:
A gate dielectric structure (201) fabrication process includes forming a transitional dielectric film (205) overlying a silicon oxide film (204). A high dielectric constant film (206) is then formed overlying an upper surface of the transitional dielectric film (205). The composition of the transitional dielectric film (205) at the silicon oxide film (204) interface primarily comprises silicon and oxygen. The high K dielectric (206) and the composition of the transitional dielectric film (205) near the upper surface primarily comprise a metal element and oxygen. Forming the transitional dielectric film (205) may include forming a plurality of transitional dielectric layers (207) where the composition of each successive transitional dielectric layer (207) has a higher concentration of the metal element and a lower concentration of silicon. Forming the transitional dielectric layer (205) may include performing multiple cycles of an atomic layer deposition process (500) where a precursor concentration for each cycle differs from the precursor concentration of the preceding cycle.
REFERENCES:
patent: 2005/0233156 (2005-10-01), Senzaki et al.
patent: 2006/0009044 (2006-01-01), Igeta et al.
Adetutu Olubunmi O.
Kalpat Sriram S.
Thean Voon-Yew
Tseng Hsing H.
Freescale Semiconductor Inc.
Nguyen Thanh
Vo Kim-Marie
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