Transition metal thin film forming method

Details Transition metal thin film forming method Transition metal thin film forming method

2008-04-22

2008-04-22

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21170

Reexamination Certificate

active

07361595

ABSTRACT:
A semiconductor substrate is placed in a predetermined processing vessel, and oxygen gas activated by, e.g. conversion into a plasma is supplied onto an insulating film. The surfaces of an interlevel insulating film and insulating film are exposed to the activated oxygen gas. After that, a transition metal film, e.g. a ruthenium film, is formed by CVD.

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