Transistorless, multistable current-mode memory cells and memory

Details Transistorless, multistable current-mode memory cells and memory Transistorless, multistable current-mode memory cells and memory

1994-05-05

1996-07-09

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Semiconductive

365159, G11C 1100

Patent

active

055351565

ABSTRACT:
A transistorless memory cell for storing information as one of two possible bistable current states comprises (i) at least one first transistorless device exhibiting N-type negative differential resistance, including a high-impedance region, a low-impedance region and a negative-resistance region and having a polarity and (ii) at least one second transistorless device exhibiting an exponential or linear current-voltage characteristic and coupled to the first transistorless device. The second transistorless device may be a diode or a resistor. The read/write operation of the transistorless memory cell is performed in a current mode.

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