Static information storage and retrieval – Systems using particular element – Negative resistance
Patent
1996-04-05
1998-04-28
Wallace, Valencia Martin
Static information storage and retrieval
Systems using particular element
Negative resistance
365174, 365175, 257 1, 257200, 257296, G11C 1100, G11C 1136, H01L 27108
Patent
active
057454078
ABSTRACT:
A transistorless memory cell for storing information as one of two possible bistable current states comprises (i) at least one first transistorless device exhibiting N-type negative differential resistance, including a high-impedance region, a low-impedance region and a negative-resistance region and having a polarity and (ii) at least one second transistorless device exhibiting an exponential or linear current-voltage characteristic and coupled to the first transistorless device. The read/write operation of the transistorless memory cell is performed in a current mode. A method for fabricating a self-aligned, three-dimensional structure of memory cells comprises the steps of (i) forming a first conducting layer, (ii) forming a first semiconductor layer above the first conducting layer, (iii) forming a second semiconductor layer above the first semiconductor layer, (iv) patterning the second semiconductor layer, (v) etching the second semiconductor layer, the first semiconductor layer and the first conducting layer, (vi) forming a second conducting layer above the second semiconductor layer, (vii) patterning and etching the second conducting layer, and (viii) etching the second semiconductor layer using the second conducting layer as a mask to form multiple semiconducting devices of a second kind, and etching the first semiconductor layer using the second conducting layer as a mask to form multiple semiconducting devices of a first kind, wherein the semiconducting devices of the first kind exhibit N-type negative differential resistance, and the semiconducting devices of the second kind may exhibit exponential or linear current-voltage characteristics.
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Levy Harold J.
McGill Thomas C.
California Institute of Technology
Martin Wallace Valencia
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