Transistor with workfunction-induced charge layer

Details Transistor with workfunction-induced charge layer Transistor with workfunction-induced charge layer

2005-05-10

2005-05-10

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S344000, C257S408000, C257S412000

Reexamination Certificate

active

06891234

ABSTRACT:
An electrical switching device includes a semiconductor having a channel therein which is proximate to at least on channel tap in an extension region and also to a gate. A conductor (e.g., a metal) is disposed proximate to the extension region but is electrically isolated from both the extension region and the gate (e.g., through the use of one or more insulators). The conductor has a workfunction outside of the bandgap of a semiconductor in the extension region and therefore includes a layer of charge in the extension region. The magnitude and polarity of this layer of charge is controlled through selection of the metal, the semiconductor, and the insulator.

REFERENCES:
patent: 4714519 (1987-12-01), Pfiester
patent: 5108940 (1992-04-01), Williams
patent: 5243212 (1993-09-01), Williams
patent: 6348387 (2002-02-01), Yu
patent: 6380038 (2002-04-01), Yu
patent: 6563151 (2003-05-01), Shin et al.

Affiliated with

Also associated with

Rating

Transistor with workfunction-induced charge layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Transistor with workfunction-induced charge layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transistor with workfunction-induced charge layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3369261