Transistor with wire source and drain

Details Transistor with wire source and drain Transistor with wire source and drain

2011-06-21

2011-06-21

Such, Matthew W (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S040000, C257S618000, C257SE29255, C174S08800C

Reexamination Certificate

active

07964901

ABSTRACT:
Field-effect transistor that includes at least a gate, a layer of insulator, a drain, a source, a semi-conductor material connecting the source to the drain, the gate and the layer of insulator each surrounding the assembly constituted by the source, the drain and the semi-conductor material, the layer of insulator being arranged between the gate and said assembly.The drain and the source are constituted by first and second electrical conductors respectively, arranged in a parallel way and disconnected one from the other, the first and second conductors being surrounded by a layer of semi-conductor over their entire circumference and over at least a part of their length.

REFERENCES:
patent: 4468089 (1984-08-01), Brorein
patent: 6437422 (2002-08-01), Solomon et al.
patent: 7205478 (2007-04-01), Kline
patent: 7491613 (2009-02-01), Kasama et al.
patent: 2005/0218461 (2005-10-01), Kasama et al.
patent: 2005/0227059 (2005-10-01), Granstrom et al.
patent: 2005/0253134 (2005-11-01), Kasama et al.
patent: 2006/0208324 (2006-09-01), Kasama et al.
patent: 2006/0250075 (2006-11-01), Kasama et al.
patent: 2007/0278527 (2007-12-01), Kasama et al.
patent: WO-2007064334 (2007-06-01), None
Francis Garnier, et al., Vertical Device Architecture By Molding of Organic-Based Thin Film Transistor, Applied Physics Letters, vol. 73, No. 12, Sep. 21, 1998, pp. 1721-1723.
Republique Francaise, Rapport De Recherche Preliminaire, dated Jul. 6, 2009, 2 pgs. In French language.

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