Transistor with variable electron affinity gate

Details Transistor with variable electron affinity gate Transistor with variable electron affinity gate

2006-11-28

2006-11-28

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S315000, C257S316000, C257SE29129, C257SE29300

Reexamination Certificate

active

07141824

ABSTRACT:
A SiC material composition is selected to establish the barrier energy between the SIC gate and a gate insulator. Various embodiments of selected SiC material composition include a memory application, such as a flash EEPROM, and a light detector or imaging application.

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