Transistor with silicon and carbon layer in the channel region

Details Transistor with silicon and carbon layer in the channel region Transistor with silicon and carbon layer in the channel region

2007-06-26

2007-06-26

Andujar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

C257S183000, C257S192000, C257SE29188

Reexamination Certificate

active

11302784

ABSTRACT:
A transistor and method of manufacturing thereof having stressed material layers formed in the channel to increase the speed and improve performance of the transistor. A layer of silicon and carbon is epitaxially grown in the channel region. A thin semiconductor material may be formed over the layer of silicon and carbon, and a stressed semiconductor layer may be epitaxially grown prior to forming the layer of silicon and carbon.

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