Transistor with silicon and carbon layer in the channel region

Details Transistor with silicon and carbon layer in the channel region Transistor with silicon and carbon layer in the channel region

2006-02-28

2006-02-28

Kang, Donghee (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S197000, C438S217000, C438S285000, C438S299000, C257S077000, C257S369000, C257S371000

Reexamination Certificate

active

07005333

ABSTRACT:
A transistor and method of manufacturing thereof having stressed material layers formed in the channel to increase the speed and improve performance of the transistor. A layer of silicon and carbon is epitaxially grown in the channel region. A thin semiconductor material may be formed over the layer of silicon and carbon, and a stressed semiconductor layer may be epitaxially grown prior to forming the layer of silicon and carbon.

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Ernst, T., et al., “A New Si:C Epitaxial Channel nMOSFET Architecture with Improved Drivability and Short-Channel Characteristics,” 2003 Symposium on VLSI Technology Digest of Technical Papers, 4-89114-035-6/03.
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Quiñones, E., et al., “Enhanced Mobility PMOSFET's Using Tensile-Strained Si1+yCyLayers,” IEEE Electron Device Letters, Jul. 1999, pp. 338-340, vol. 20, No. 7, IEEE.

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