Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-10-24
2006-10-24
Quach, T. N. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S401000
Reexamination Certificate
active
07126192
ABSTRACT:
A power transistor, formed from transistors connected in parallel, each transistor is formed in an active region using a relatively long gate called a gate finger that is typically formed from polysilicon that accumulates resistance over its length. To alleviate this, the gate finger is strapped to a metal line at tabs adjacent to the finger gate over the active area, typically over the source, but the tabs add gate-to-source capacitance. This was previously quite small but as gate dielectrics have gotten thinner there is more capacitive coupling to the substrate by the tabs, and as gates have gotten thinner there is more resistance in the polysilicon finger gates. Both have the effect of increasing the RC time constant of the gate finger. This increase in RC time constant is alleviated by increasing the thickness of the dielectric separating the tabs from the substrate thereby reducing the capacitance caused by the tabs.
REFERENCES:
patent: 5025296 (1991-06-01), Fullerton et al.
patent: 5434095 (1995-07-01), Hollinger
patent: 5592006 (1997-01-01), Merrill
patent: 5614751 (1997-03-01), Yilmaz et al.
patent: 5886938 (1999-03-01), Haukness
patent: 6023086 (2000-02-01), Reyes et al.
patent: 6744117 (2004-06-01), Dragon et al.
patent: 6864533 (2005-03-01), Yasuhara et al.
patent: 6943410 (2005-09-01), Fujihira et al.
patent: 7067876 (2006-06-01), Yasuhara et al.
CLingan, Jr. James L.
Freescale Semiconductor Inc.
Hill Daniel D.
Quach T. N.
LandOfFree
Transistor with reduced gate-to-source capacitance and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Transistor with reduced gate-to-source capacitance and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transistor with reduced gate-to-source capacitance and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3622986