Transistor with reduced charge carrier mobility

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S346000, C257S351000, C257S353000, C257SE21442

Reexamination Certificate

active

07915681

ABSTRACT:
A device includes a first transistor including a fin and a second transistor including a fin, the fin of the first transistor having a lower charge carrier mobility than the fin of the second transistor. In a method, the fin of the first transistor is treated to have a lower charge carrier mobility than the fin of the second transistor.

REFERENCES:
patent: 5973965 (1999-10-01), Berthold et al.
patent: 6882007 (2005-04-01), Landgraf et al.
patent: 6974983 (2005-12-01), Hill et al.
patent: 7173302 (2007-02-01), Brederlow et al.
patent: 2007/0096196 (2007-05-01), Hofmann et al.

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