Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-29
2011-03-29
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S346000, C257S351000, C257S353000, C257SE21442
Reexamination Certificate
active
07915681
ABSTRACT:
A device includes a first transistor including a fin and a second transistor including a fin, the fin of the first transistor having a lower charge carrier mobility than the fin of the second transistor. In a method, the fin of the first transistor is treated to have a lower charge carrier mobility than the fin of the second transistor.
REFERENCES:
patent: 5973965 (1999-10-01), Berthold et al.
patent: 6882007 (2005-04-01), Landgraf et al.
patent: 6974983 (2005-12-01), Hill et al.
patent: 7173302 (2007-02-01), Brederlow et al.
patent: 2007/0096196 (2007-05-01), Hofmann et al.
Berthold Jörg
Pacha Christian
von Arnim Klaus
Infineon - Technologies AG
Infineon Technologies
Le Dung A.
Schlazer Philip H.
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