Transistor with pi-gate structure and method for producing...

Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With electrical contact in hole in semiconductor

Reexamination Certificate

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Details

C257S774000, C257S346000, C257S192000

Reexamination Certificate

active

06734528

ABSTRACT:

FIELD OF THE INVENTION
The present invention relates to a transistor with &pgr;-gate structure usable at microwave and millimeter wave and a method for producing the same.
BACKGROUND OF THE INVENTION
Conventional extra-high speed transistors were manufactured to have T-gate structure in order to increase the cross section of gates. However, there was a limit in increasing the cross section under the restriction of source-drain spacing. However, the present inventors found that the production of gates with very large cross section without the restriction of the source-drain spacing is possible, by employing an air bridge technique in which the gate is manufactured beyond the drain electrode to result in &pgr;-structure, whereby the characteristic of the transistor is remarkably improved.
SUMMARY OF THE INVENTION
The present invention proposes the structure of a transistor having a gate of very large cross section and a method for manufacturing the same and so the object of the invention is to improve the noise factor and frequency characteristic of a circuit by decreasing the gate resistance in the transistors for microwave and millimeter wave.
The invention is also intended to improve the performance of a wireless communications system through the improvement in the characteristics of unit elements and circuits.


REFERENCES:
patent: 4974039 (1990-11-01), Schindler et al.
patent: 6072214 (2000-06-01), Herzer et al.
patent: 0 926 727 (1999-06-01), None
patent: WO 98/53491 (1998-11-01), None
patent: WO 00/52760 (2000-09-01), None

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