Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2011-08-30
2011-08-30
Arora, Ajay K (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257SE21108, C257SE29070, C438S744000
Reexamination Certificate
active
08008650
ABSTRACT:
An object of the present invention is to provide a new n-type transistor, different from the prior art, using a channel having a nanotube-shaped structure, and having n-type semiconductive properties. To realize this, a film of a nitrogenous compound6is formed directly on a channel5of a transistor1comprising a source electrode2, a drain electrode3, a gate electrode4and the n-type channel5having a nanotube-shaped structure and provided between the source electrode2and the drain electrode3.
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Kojima Atsuhiko
Matsumoto Kazuhiko
Nagao Satoru
Arora Ajay K
Japan Science and Technology Agency
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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