Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-06-28
2005-06-28
Le, Vu A. (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185260, C365S185330, C257S315000, C257S316000, C257S321000
Reexamination Certificate
active
06912158
ABSTRACT:
A memory is described which has memory cells that store data using hot electron injection. The data is erased through electron tunneling. The memory cells are described as floating gate transistors wherein the floating gate is fabricated using a conductive layer of nanocrystalline silicon particles. Each nanocrystalline silicon particle has a diameter of about 10 Å to 100 Å. The nanocrystalline silicon particles are in contact such that a charge stored on the floating gate is shared between the particles. The floating gate has a reduced electron affinity to allow for data erase operations using lower voltages.
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Le Toan
Le Vu A.
Micro)n Technology, Inc.
Schwegman Lundberg Woessner & Kluth P.A.
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