Transistor with layered high-K gate dielectric and method...

Details Transistor with layered high-K gate dielectric and method... Transistor with layered high-K gate dielectric and method...

2002-03-15

2004-04-06

Zarneke, David A. (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S410000, C257S411000, C438S216000, C438S261000, C438S591000

Reexamination Certificate

active

06717226

ABSTRACT:

FIELD OF THE INVENTION
This invention relates generally to semiconductor processing, and more specifically, to gate dielectrics of semiconductors.
BACKGROUND
In semiconductor processing, a gate electrode lying over a gate dielectric is typically formed of polysilicon. The gate electrode is usually doped with boron to increase the conductivity of the gate electrode. During subsequent processing at temperatures greater than approximately 900 degrees Celsius, the boron diffuses through the gate dielectric to an underlying semiconductor substrate, undesirably making the underlying semiconductor substrate more conductive. The increased conductivity of the underlying semiconductor substrate, which is typically silicon, decreases the performance of a semiconductor device.
Typically, the gate dielectric is silicon dioxide (SiO
2
). Due to the scaling of semiconductor devices, however, SiO
2
is being replaced with high dielectric constant (high-k) materials, where the dielectric constant is greater than approximately the dielectric constant of SiO
2
Since the high-k materials being proposed for the gate dielectric, especially hafnium oxide (HfO
2
), are generally less amorphous than SiO
2
the high-k materials permit more boron to diffuse through the high-k material to the semiconductor substrate. Therefore, a need exists for a gate dielectric that has a high dielectric constant and substantially prevents boron diffusion from the gate electrode to the semiconductor substrate.


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