Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-04-26
2005-04-26
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S295000, C257S296000, C257S300000, C257S632000, C438S254000
Reexamination Certificate
active
06885048
ABSTRACT:
A transistor-type ferroelectric nonvolatile memory element having an MFMIS (metal-ferroelectric-metal-insulator-semiconductor) structure that can be highly densely integrated. The MFMIS transistor has a constitution in which the MFM (metal-ferroelectric-metal) structure and the MIS (metal-insulator-semiconductor) structure are stacked up and down on nearly the same area, and the lower MIS structure has means for increasing the effective area of the MIS capacitance. Means for increasing the effective area of the capacitor is a trench in the semiconductor substrate, ruggedness in the MIS structure or a MIN (metal-insulator-metal) structure.
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“Electrical Properties of MFIS-and MFMIS-FETs Using Ferroelectric SrBi2Ta2O9Film and SrTa2O6/SiON Buffer Layer” Extended Abstracts of the International Conference on Solid State Devices and Materials, Japan Society of Applied Physics, Tokyo, Japan; 1999, pp. 404-405, XP000935143; *p. 405; figure 1*.
Sakamaki Kazuo
Tarui Yasuo
Jordan and Hamburg LLP
Nelms David
Nippon Precision Circuits Inc.
Tarui Yasuo
Tran Mai-Huong
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