Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-09-29
2008-11-04
Menz, Laura M (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S426000, C438S198000
Reexamination Certificate
active
07445973
ABSTRACT:
A transistor surround gate structure and a method of forming thereof on a semiconductor assembly are described. The transistor surround gate structure is formed on a partial silicon-on-insulator in one direction and on a full silicon-on insulator in a second direction and may be scaled to 4f2line width for a memory array. A plurality of transistor surround gate structures are utilized as memory storage cells in various memory device applications, such as a dynamic random access memory application, a flash memory application and a single transistor memory cell is utilized in an embedded memory device application, which provide for the use of any one of the memory device applications to be used in a system.
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U.S. Appl. No. 11/488,384, filed Jul. 17, 2006, Gonzalez, Fernando.
Gonzalez Fernando
Mouli Chandra
Menz Laura M
Micro)n Technology, Inc.
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