Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-06-06
2006-06-06
Lee, Eddie (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S301000, C257S303000, C257S306000, C257S296000, C257S410000, C257S510000, C257S288000, C257S390000
Reexamination Certificate
active
07057242
ABSTRACT:
An integrated circuit transistor includes an active region in a substrate, elongated along a first direction. A gate pattern is disposed on the substrate and crosses the active region along a second direction transverse to the first direction. The gate pattern includes an access gate portion disposed on the active region and narrowed at a central portion thereof. The gate pattern may further include a pass gate portion adjoining the access gate portion at the point beyond the edge of the active region, the pass gate portion having a lesser extent along the first direction than the access gate portion.
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Kim Hyoung-sub
Kim Ji-young
Im Junghwa
Lee Eddie
Myers Bigel & Sibley Sajovec, PA
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