Transistor structure with a curved channel, memory cell and...

Details Transistor structure with a curved channel, memory cell and... Transistor structure with a curved channel, memory cell and...

2007-10-09

2007-10-09

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S390000

Reexamination Certificate

active

11024935

ABSTRACT:
A transistor structure having source/drain regions arranged in a horizontal plane along an x axis has a recess structure, which separates the two source/drain regions from one another and increases the effective channel length Leffof the transistor structure. A vertical gate electrode with respect to the horizontal plane extends along the x axis and in this case encloses an active zone of the transistor structure from two sides or completely. The effective channel width Weffis dependent on the depth to which the gate electrode is formed. A memory cell having a selection transistor in accordance with the transistor structure has both a low leakage current and a good switching behavior. By a suitable integration concept, the transistor structure is integrated into a memory cell array of a DRAM having hole trench capacitors or stacked capacitors.

REFERENCES:
patent: 5920088 (1999-07-01), Augusto
patent: 5945707 (1999-08-01), Bronner et al.
patent: 6977404 (2005-12-01), Katsumata et al.
patent: 2001/0010957 (2001-08-01), Forbes et al.
patent: 2005/0127421 (2005-06-01), Seidl et al.

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