Transistor structure having a trench drain

Details Transistor structure having a trench drain Transistor structure having a trench drain

2008-10-09

2010-12-07

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29030

Reexamination Certificate

active

07847350

ABSTRACT:
A semiconductor device is formed having a trench adjacent to a current carrying region of the device. The trench is formed having a depth greater than the depth of a tub region of the device. Increasing the trench depth moves a region of higher field strength from the tub region to a region along the trench. The region along the trench does not have a junction and may withstand the higher field strength.

REFERENCES:
patent: 2002/0185679 (2002-12-01), Baliga
patent: 2005/0001268 (2005-01-01), Baliga

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