Transistor structure having a conductive layer formed...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S329000, C257SE29262, C438S197000, C438S268000

Reexamination Certificate

active

08008720

ABSTRACT:
A semiconductor device is formed having a pedestal. The pedestal includes at least two dielectric layers. The pedestal has a sidewall and a major surface. A conductive layer is formed overlying the pedestal. A vertical portion of the conductive layer adjacent to the sidewall of the pedestal is a gate of the transistor. The portion of the conductive layer overlying the major surface can be used as interconnect. The gate and gate interconnect are contiguous and formed in a single process. A conductive shield layer may be integrated into the pedestal. The conductive shield layer functions as a faraday shield that reduces gate to drain capacitance of the device.

REFERENCES:
patent: 2003/0178676 (2003-09-01), Henninger et al.

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