Transistor structure for electrostatic discharge protection...

Details Transistor structure for electrostatic discharge protection... Transistor structure for electrostatic discharge protection...

2006-09-05

2006-09-05

Trinh, Michael (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S360000

Reexamination Certificate

active

07102195

ABSTRACT:
An electrostatic discharge (ESD) protection device includes a semiconductor layer, a source region formed in the layer, a drain region formed in the layer, a channel region in the layer between the source and drain regions, and a gate over the channel region. One or more islands are distributed either symmetrically or non-symmetrically in and along the drain region. The islands can be formed of polysilicon or a field oxide.

REFERENCES:
patent: 5248892 (1993-09-01), Van Roozendaal et al.
patent: 5721439 (1998-02-01), Lin
patent: 5742083 (1998-04-01), Lin
patent: 5763919 (1998-06-01), Lin
patent: 6064095 (2000-05-01), Fu

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