Transistor structure and method of fabrication

Details Transistor structure and method of fabrication Transistor structure and method of fabrication

2005-10-04

2005-10-04

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000

Reexamination Certificate

active

06952040

ABSTRACT:
A novel transistor structure and its method of fabrication. According to the present invention, the transistor includes an intrinsic silicon body having a first surface. A gate dielectric is formed on the first surface of the intrinsic silicon body. A gate electrode is formed on the gate dielectric wherein the gate electrode comprises a mid-gap work function film on the gate dielectric. A pair of source/drain regions are formed on opposite sides of the intrinsic silicon body.

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