Transistor structure and method for making same

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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257412, H01L 2976, H01L 31062, H01L 31113, H01L 31119

Patent

active

057104530

ABSTRACT:
A gate structure in a transistor and method for fabricating the structure. A gate structure is formed on a substrate. The gate structure includes three layers: an oxide layer, a nitride layer and a polysilicon layer. The oxide layer is located on the substrate, the nitride layer is located on the oxide layer, and the polysilicon layer is located on the nitride layer. The gate structure is reoxidized to form a layer of oxide over the gate structure.

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